It can also operate at higher temperatures, voltages, and frequencies than other semiconductors. When the bandgap is high, the electronics it uses can be smaller, run faster, and more reliably. A relevant factor in these applications is the bandgap, or energy gap, offered by the semiconductor. Why SiC overcomes Si in power applications?ĭespite being the most widely used semiconductor in electronics, silicon is beginning to show some limitations, especially in high-power applications. The main applications of SiC devices, such as Schottky diodes and FET/MOSFET transistors, include converters, inverters, power supplies, battery chargers and motor control systems. SiC diodes and transistors can also operate at higher frequencies and temperatures without compromising reliability. Semiconductors based on silicon carbide offer higher thermal conductivity, higher electron mobility, and lower power losses. Silicon carbide is a semiconductor that is perfectly suited to power applications, thanks above all to its ability to withstand high voltages, up to ten times higher than those usable with silicon. Which are the applications of SiC in electronics? excellent thermal management which reduces cooling requirementsĢ.small die size (with the same breakdown voltage).high operating frequency and temperature (operating up to 200☌ junction).low thermal expansion and excellent thermal shock resistance.The combination of silicon with carbon provides this material with excellent mechanical, chemical and thermal properties, including: A six inches SiC wafer is shown in Figure 1.įigure 1: 6 inches SiC wafer (source: ST) 1. Though SiC is available with different polymorphic crystalline structures (also known as polytypes), the 4H-SiC polytype hexagonal crystal structure is the most suitable for high power applications. In recent decades, efforts have focused on developing specific and unique high-temperature crystal growth processes. Although the material has been known for a long time, its use as a semiconductor is relatively recent, in great measure due to the availability of large and high-quality wafers. SiC-based power devices are driving a radical transformation of power electronics, thanks to a combination of excellent physical and electronic properties. The main advantage offered by silicon carbide in power applications is its low drift region resistance, which is a key factor for high-voltage power devices. The wide band gap and high thermal stability allow SiC devices to be used at junction temperatures higher than those of silicon, even over 200☌. Its physical bond is very strong, giving the semiconductor a high mechanical, chemical and thermal stability. Silicon carbide (SiC), a semiconductor compound consisting of silicon (Si) and carbon (C), belongs to the wide bandgap (WBG) family of materials.
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